2N5884 & 2N5886
Complementary Power
Transistors
General-purpose power amplifier and switching applications.
Features:
• Low Collector-Emitter Saturation Voltage VCE(sat) = 1.
0V (Maximum) at IC = 15A.
• Excellent DC current Gain hFE = 20 ~ 100 at IC = 10A.
Pin 1.
Base 2.
Emitter Collector(Case)
Maximum Ratings
Dimensions Minimum Maximum
A
38.
75
39.
96
B
19.
28
22.
23
C 7.
96 9.
28
D
11.
18
12.
19
E
25.
20
26.
67
F 0.
92 1.
09
G 1.
38 1.
62
H
29.
90
30.
40
I
16.
64
17.
30
J 3.
88 4.
36
K
10.
67
11.
18
Dimensions : Millimetres
PNP 2N5884
NPN 2N5886
25 Ampere Complementary Silicon
Power
Transistors 80 Volts 200 Watts
TO-3
Characteristic
Symbol
Collector-Emitter Voltage
Collector-B...