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2N5800

Part Number	2N5800
Manufacturer	ETC
Description	SILICON P-CHANNEL JUNCTION FET
Published	Jul 13, 2018
Detailed Description	2N5797 (SILICON) thru 2N5800 SILICON P·CHANNEL JUNCTION FIELD·EFFECT TRANSISTORS Symmetrical depletion mode Junction Fi...
Datasheet	2N5800 PDF File

Overview

2N5797 (SILICON) thru 2N5800 SILICON P·CHANNEL JUNCTION FIELD·EFFECT TRANSISTORS Symmetrical depletion mode Junction Field·Effect Transistors de· signed primarily for low-power, audio amplifier applications.
• Low Reverse Transfer Capacitance Crss = 1.
0 pF (Maxi • Drain and Source Interchangeable • Low Gate Reverse Current - IGSS = 1.
0 nAdc (Maxi • Unibloc Plastic Package Encapsulation P·CHANNEL JUNCTION FIELD·EFFECT TRANSISTORS *MAXIMUM RATINGS Rating Drain-Source Voltage Drain-Gate Voltage Reverse Gate-Source Voltage Forward Gate Current Total Device Dissipation @TC"" 2SoC Derate above 25°C Operating and Storage Junction Temperature Range "'Indicates JEDEC Registered Data.
Symbol VOS VOG VGSR IGF Po TJ,TsIg Value 40 40 40 10 350 2.
8 -651o +150 Unit Vdc Vdc Vdc mAde mW mW/oC °c U'PLA~NEH",r~-~ 01 PIN 1 SOURCE D--'-Illl!ltt 2 ORAIN ~V¥,3 GATE E, M r-'" 0 G JI DIM C D G J 2.
160 2.
420 K 12.
700 L TP 1.
270 TP M 0.
013 0.
076 0.
33 CASE 29·01 TO-92 2-270 2N5797...

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