BDX33, 34
Darlington
Transistors
Features:
• Collector-Emitter sustaining voltageVCEO(sus) = 80V (Minimum) - BDX33B, BDX34B = 100V (Minimum) - BDX33C, BDX34C
• Monolithic construction with Built-in Base-Emitter shunt resistor.
Pin 1.
Base 2.
Collector 3.
Emitter 4.
Collector(Case)
Dimensions Minimum Maximum
A
14.
68
15.
31
B 9.
78 10.
42
C 5.
01 6.
52
D
13.
06
14.
62
E 3.
57 4.
07
F 2.
42 3.
66
G 1.
12 1.
36
H 0.
72 0.
96
I 4.
22 4.
98
J 1.
14 1.
38
K 2.
20 2.
97
L 0.
33 0.
55
M 2.
48 2.
98
O 3.
70 3.
90
Dimensions : Millimetres
NPN BDX33B BDX33C
PNP BDX34B BDX34C
10 Ampere Complementary Silicon
Power
Transistors 80 - 100 Volts 70 Watts
TO-220
Page 1
31/05/05 V1.
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BDX33, 34
Darlington Transi...