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BDX13

INCHANGE
Part Number BDX13
Manufacturer INCHANGE
Description NPN Transistor
Published Sep 30, 2020
Detailed Description isc Silicon NPN Power Transistor INCHANGE Semiconductor BDX13 DESCRIPTION ·Excellent Safe Operating Area ·DC Current G...
Datasheet PDF File BDX13 PDF File

BDX13
BDX13

Overview
isc Silicon NPN Power Transistor INCHANGE Semiconductor BDX13 DESCRIPTION ·Excellent Safe Operating Area ·DC Current Gain-hFE=15-60@IC = 8A ·Collector-Emitter Saturation Voltage- : VCE(sat)= 1.
0 V(Max)@ IC = 4A ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation.
APPLICATIONS ·Designed for general-purpose switching and amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 50 V VCEO Collector-Emitter Voltage 40 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 15 A IB Base Current 7 A PC Collector Power Dissipation@TC=25℃ 117 W TJ, Tstg Operating and Storage Junction Temperature Range -65~+150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX UNIT 1.
52 ℃/W isc website：www.
iscsemi.
com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistors INCHANGE Semiconductor...


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