MSN0310W

MSN0310W 30V(D-S) N-Channel Enhancement Mode Power MOS FET General Features ● VDS =30V,ID =10A RDS(ON) 12mΩ @ VGS=10V RDS(ON) 16mΩ @ VGS=4.5V ● High density cell design for ultra low Rdson ● Fully characterized Avalanche voltage and current Application ● Power switching application ● Hard Switched and High Frequency Circuits ● Uninterruptible Power Supp...