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MSN0318W

MORESEMI
Part Number MSN0318W
Manufacturer MORESEMI
Description N-Channel MOSFET
Published Oct 29, 2016
Detailed Description MSN0318W 30V(D-S) N-Channel Enhancement Mode Power MOS FET General Features ● VDS =30V,ID =18A RDS(ON) < 7mΩ @ VGS=10V...
Datasheet PDF File MSN0318W PDF File

MSN0318W
MSN0318W

Overview
MSN0318W 30V(D-S) N-Channel Enhancement Mode Power MOS FET General Features ● VDS =30V,ID =18A RDS(ON) < 7mΩ @ VGS=10V RDS(ON) < 10mΩ @ VGS=4.
5V ● High density cell design for ultra low Rdson ● Fully characterized Avalanche voltage and current Lead Free Application ● Power switching application ● Hard switched and high frequency circuits ● Uninterruptible power supply Marking and pin Assignment PIN Configuration SOP-8 top view Schematic diagram Package Marking and Ordering Information Device Marking MSN0318W Device MSN0318W Device Package SOP-8 Reel Size Ø330mm Tape width 12mm Quantity 2500 units Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Drain Current-Continuous ID Drain Current-Continuous(TA=100℃) ID (100℃) Pulsed Drain Current Maximum Power Dissipation Operating Junction and Storage Temperature Range IDM PD TJ,TSTG Thermal Characteristic Thermal Resistan...


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