Xi′an Longtium Microelectronics Technology Developing Co.
, Ltd.
Features  High ruggedness  RDS(ON) (Max 1.
3 Ω)@VGS=10V  Gate Charge (Typ 38nC)  Improved dv/dt Capability  100% Avalanche Tested General Description  This power MOSFET is produced with advanced VDMOS technology of LONGTIUMIC.
 This technology enable power MOSFET to have better characteristics,  Such as fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics.
 This power MOSFET is usually used at high efficient DC to DC converter block and switch mode power supply.
LT7N60 N-channel MOSFET N-channel MOSFET 2 Order Codes Item Sales Type 1 LT P 7N60A 2 LT F 7N60A Marking...

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