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LT7N60A

Longtium Microelectronics
Part Number LT7N60A
Manufacturer Longtium Microelectronics
Description N-channel MOSFET
Published Oct 29, 2016
Detailed Description Xi′an Longtium Microelectronics Technology Developing Co., Ltd. Features  High ruggedness  RDS(ON) (Max 1.3 Ω)@VGS=10V...
Datasheet PDF File LT7N60A PDF File

LT7N60A
LT7N60A

Overview
Xi′an Longtium Microelectronics Technology Developing Co.
, Ltd.
Features  High ruggedness  RDS(ON) (Max 1.
3 Ω)@VGS=10V  Gate Charge (Typ 38nC)  Improved dv/dt Capability  100% Avalanche Tested General Description  This power MOSFET is produced with advanced VDMOS technology of LONGTIUMIC.
 This technology enable power MOSFET to have better characteristics,  Such as fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics.
 This power MOSFET is usually used at high efficient DC to DC converter block and switch mode power supply.
LT7N60 N-channel MOSFET N-channel MOSFET 2 Order Codes Item Sales Type 1 LT P 7N60A 2 LT F 7N60A Marking LT7N60A LT7N60A Package TO-220 TO-220F Packaging TUBE TUBE （2011-AUG Version1.
0）www.
longtiumic.
com 1/7 LT7N60 Absolute maximum ratings Symbol Parameter VDSS ID IDM VGS EAS EAR dv/dt PD TSTG, TJ TL Drain to Source Voltage Continuous Drain Current (@TC=25oC) Contin...


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