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MD56V62160E

SYNCHRONOUS DYNAMIC RAM

Description

MD56V62160E 4-Bank  1,048,576-Word  16-Bit SYNCHRONOUS DYNAMIC RAM FEDD56V62160E-07 Issue Date: Nov. 18, 2013 DESCRIPTION The MD56V62160E is a 4-Bank  1,048,576-word  16-bit Synchronous dynamic RAM fabricated in LAPIS Semiconductor’s silicon-gate CMOS technology. The device operates at 3.3 V. The inputs and outputs are LVTTL compatible. FEATURES • Sili...

LAPIS

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