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MD56V62160E

LAPIS
Part Number MD56V62160E
Manufacturer LAPIS
Description SYNCHRONOUS DYNAMIC RAM
Published Nov 6, 2016
Detailed Description MD56V62160E 4-Bank  1,048,576-Word  16-Bit SYNCHRONOUS DYNAMIC RAM FEDD56V62160E-07 Issue Date: Nov. 18, 2013 DESCRI...
Datasheet PDF File MD56V62160E PDF File

MD56V62160E
MD56V62160E

Overview
MD56V62160E 4-Bank  1,048,576-Word  16-Bit SYNCHRONOUS DYNAMIC RAM FEDD56V62160E-07 Issue Date: Nov.
18, 2013 DESCRIPTION The MD56V62160E is a 4-Bank  1,048,576-word  16-bit Synchronous dynamic RAM fabricated in LAPIS Semiconductor’s silicon-gate CMOS technology.
The device operates at 3.
3 V.
The inputs and outputs are LVTTL compatible.
FEATURES • Silicon gate, quadruple poly-silicon CMOS, 1-transistor memory cell • 4-Bank  1,048,576-word  16-bit configuration • Single 3.
3 V power supply, 0.
3 V tolerances • Input : LVTTL compatible • Output : LVTTL compatible • Refresh : 4096 cycles/64 ms • Programmable data transfer mode - CAS Latency (2, 3) - Burst Length (1, 2, 4, 8, Full Page) - Data scramble (sequential, interleave) • CBR auto-refresh, Self-refresh capability • Packages: 54-pin 400 mil plastic TSOP (TypeII) (P-TSOP(2)54-400-0.
80-UK6) (Product: MD56V62160E-xxTA) xx indicates speed rank.
PRODUCT FAMILY Family MD56V62160E-10 Max.
Frequency...


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