INCHANGE Semiconductor
isc N-Channel Mosfet
Transistor
isc Product Specification
FQP33N10
·FEATURES ·Low RDS(on) ·Silicon Gate for Fast Switching Speed ·Rugged ·Low Drive Requirements
·DESCRITION ·Designed especially for low voltage applications such as Audio amplifier,high efficiency switching DC/DC converters, and DC motor control.
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VDSS
Drain-Source Voltage
100 V
VGS Gate-Source Voltage-Continuous
±25
V
ID Drain Current-Continuous
33 A
IDM Drain Current-Single Plused
132 A
PD Total Dissipation @TC=25℃
127 W
Tj Max.
Operating Junction Temperature -55~175 ℃
Tstg Storage Temperature
-55~175 ℃
·THERMAL CHARAC...