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FQP33N10

Inchange Semiconductor
Part Number FQP33N10
Manufacturer Inchange Semiconductor
Description N-Channel Mosfet Transistor
Published Nov 6, 2016
Detailed Description INCHANGE Semiconductor isc N-Channel Mosfet Transistor isc Product Specification FQP33N10 ·FEATURES ·Low RDS(on) ·Sili...
Datasheet PDF File FQP33N10 PDF File

FQP33N10
FQP33N10

Overview
INCHANGE Semiconductor isc N-Channel Mosfet Transistor isc Product Specification FQP33N10 ·FEATURES ·Low RDS(on) ·Silicon Gate for Fast Switching Speed ·Rugged ·Low Drive Requirements ·DESCRITION ·Designed especially for low voltage applications such as Audio amplifier,high efficiency switching DC/DC converters, and DC motor control.
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 100 V VGS Gate-Source Voltage-Continuous ±25 V ID Drain Current-Continuous 33 A IDM Drain Current-Single Plused 132 A PD Total Dissipation @TC=25℃ 127 W Tj Max.
Operating Junction Temperature -55~175 ℃ Tstg Storage Temperature -55~175 ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 1.
18 ℃/W Rth j-a Thermal Resistance,Junction to Ambient 62.
5 ℃/W isc website：www.
iscsemi.
com 1 isc & iscsemi is registered trademark INCHANGE Semiconductor isc N-Channel Mosfet Transistor...


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