INCHANGE Semiconductor
isc Silicon
PNP Darlington Power
Transistor
isc Product Specification
ST26025A
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -100V(Min.
) ·High DC Current Gain-
: hFE= 750(Min.
)@IC= -10A ·Low Collector Saturation Voltage-
: VCE (sat)= -3.
0V(Max.
)@ IC= -20A ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for use as output devices in complementary
general purpose amplifier applications.
ABSOLUTE MAXIMUM RATINGS (Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-120
V
VCEO
Collector-Emitter Voltage
-100
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current-Contin...