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ST26025A

Inchange Semiconductor
Part Number ST26025A
Manufacturer Inchange Semiconductor
Description Silicon PNP Power Transistor
Published Nov 6, 2016
Detailed Description INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor isc Product Specification ST26025A DESCRIPTION ·Col...
Datasheet PDF File ST26025A PDF File

ST26025A
ST26025A

Overview
INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor isc Product Specification ST26025A DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -100V(Min.
) ·High DC Current Gain- : hFE= 750(Min.
)@IC= -10A ·Low Collector Saturation Voltage- : VCE (sat)= -3.
0V(Max.
)@ IC= -20A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use as output devices in complementary general purpose amplifier applications.
ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -120 V VCEO Collector-Emitter Voltage -100 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continunous -20 A IB Base Current-Continunous PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature -1 A 160 W 200 ℃ Tstg Storage Temperature Range -55~+200 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case MAX UNIT 0.
87 ℃/W isc website...


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