INCHANGE Semiconductor
isc N-Channel MOSFET
Transistor
isc Product Specification
IRFP353(R)
FEATURES ·Drain Current –ID= 13A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 350V(Min) ·Static Drain-Source On-Resistance
: RDS(on) = 0.
4Ω(Max) ·Fast Switching
DESCRIPTION ·Designed for use in switch mode power supplies and general
purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VDSS
Drain-Source Voltage
VGS Gate-Source Voltage-Continuous
ID Drain Current-Continuous
IDM Drain Current-Single Pluse
PD Total Dissipation @TC=25℃
TJ Max.
Operating Junction Temperature
Tstg Storage Temperature
VALUE UNIT
350 V
±20
V
13 A
52 A
150 W
-55~150 ℃
-55~150 ℃
THERMAL CHARA...