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IRFP350LC

Part Number	IRFP350LC
Manufacturer	International Rectifier
Description	Power MOSFET
Published	Jul 2, 2006
Detailed Description	HEXFET® Power MOSFET PD - 9.1229 IRFP350LC Ultra Low Gate Charge Reduced Gate Drive Requirement Enhanced 30V Vgs Ratin...
Datasheet	IRFP350LC PDF File

Overview

HEXFET® Power MOSFET PD - 9.
1229 IRFP350LC Ultra Low Gate Charge Reduced Gate Drive Requirement Enhanced 30V Vgs Rating Reduced Ciss, Coss, Crss Isolated Central Mounting Hole Dynamic dv/dt Rated Repetitive Avalanche Rated VDSS = 400V RDS(on) = 0.
30Ω ID = 16A Description This new series of Low Charge HEXFET Power MOSFETs achieve significantly lower gate charge over conventional MOSFETs.
Utilizing advanced Hexfet technology the device improvements allow for reduced gate drive requirements, faster switching speeds and increased total system savings.
These device improvements combined with the proven ruggedness and reliability of HEXFETs offer the designer a new standard in power transistor...

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