Schottky Barrier Rectifier
INCHANGE Semiconductor
MBR10120
FEATURES ·Low Reverse Current ·Low Stored Charge, Majority Carrier Conduction
·Low Power Loss/High Efficiency ·Highly Stable Oxide Passivated Junction ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·High Frequency switch power Supply ·Free wheeling diodes and polarity protection applicationsds
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VRRM VRWM
VR
VRMS
Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage
Maximum RMS Reverse Voltage
VALUE UNIT 120 V 70 V
IF(AV) IFSM TJ
Average Rectified Forward Current
Nonrepetitive Peak Surge Current (Sur...