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MBR10100

Diotec
Part Number MBR10100
Manufacturer Diotec
Description High Temperature Schottky Rectifier Diodes
Published Sep 24, 2015
Detailed Description MBR10100 MBR10100 High Temperature Schottky Rectifier Diodes – Single Diode Hochtemperatur Schottky-Gleichrichterdiode...
Datasheet PDF File MBR10100 PDF File

MBR10100
MBR10100

Overview
MBR10100 MBR10100 High Temperature Schottky Rectifier Diodes – Single Diode Hochtemperatur Schottky-Gleichrichterdioden – Einzeldiode Version 2015-01-14 1.
2±0.
2 4.
5±0.
2 14.
9±0.
7 10.
1±0.
3 Ø 3.
8±0.
2 4 Type Typ 13 2.
8±0.
3 4 8.
7±0.
3 3.
9±0.
3 2.
67±0.
2 0.
42±0.
1 13.
9±0.
3 1.
3±0.
1 0.
8±0.
2 1 5.
08±0.
1 3 Dimensions - Maße [mm] Nominal current Nennstrom Repetitive peak reverse voltage Periodische Spitzensperrspannung Plastic case – Kunststoffgehäuse Weight approx.
Gewicht ca.
Plastic material has UL classification 94V-0 Gehäusematerial UL94V-0 klassifiziert Standard packaging in tubes Standard Lieferform in Stangen 10 A 100 V TO-220AC 1.
8 g Maximum ratings and Characteristics Type Typ Repetitive peak reverse voltage Periodische Spitzensperrspannung VRRM [V] Surge peak reverse voltage Stoßspitzensperrspannung VRSM [V] MBR10100 100 100 Grenz- und Kennwerte Forward voltage Durchlass-Spannung VF [V] 1) IF = 5 A IF = 10 A tbd < 0.
8 Max.
average forward rectified current, R-load Dauergrenzstrom in Einwegschaltung mit R-Last Repetitive peak forward current Periodischer Spitzenstrom Peak forward surge current, 50/60 Hz half sine-wave Stoßstrom für eine 50/60 Hz Sinus-Halbwelle Rating for fusing, t < 10 ms Grenzlastintegral, t < 10 ms Junction temperature – Sperrschichttemperatur Storage temperature – Lagerungstemperatur TC = 125°C f > 15 Hz SBT1090.
.
.
TA = 25°C SBT10100 TA = 25°C IFAV IFRM IFSM i2t Tj TS 10 A 30 A 2) 135/150 A 80 A2s -50.
.
.
+175°C -50.
.
.
+175°C 1 Tj = 25°C 2 Max.
temperature of the case TC = 100°C – Max.
Temperatur des Gehäuses TC = 100°C © Diotec Semiconductor AG http://www.
diotec.
com/ 1 Characteristics Leakage current Sperrstrom Thermal resistance junction to case Wärmewiderstand Sperrschicht – Gehäuse Tj = 25°C Tj = 125°C VR = VRRM VR = VRRM IR IR RthC MBR10100 Kennwerte < 100 µA typ.
5 mA < 2 K/W 120 [%] 100 80 60 40 20 IFAV 0 0 TC 50 100 150 [°C] Rated forward current versus case temperature Zul.
Richtstrom in Abh.
von der G...


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