isc Silicon
PNP Power
Transistor
DESCRIPTION ·Low collector-to-emitter saturation voltage
: VCE(sat)= -1.
0V(Max)@IC= -4A ·Fast switching speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Power amplifier applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO VCEO VEBO
IC ICM
PC
TJ
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current-Continuous
Collector Current-Peak Collector Power Dissipation @ Ta=25℃ Collector Power Dissipation @ TC=25℃
Junction Temperature
-30
V
-20
V
-6
V
-5
A
-10
A
1.
0 W
10
150
℃
Tstg
Storage Temperature Range
-5...