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2SB1400

Hitachi Semiconductor
Part Number 2SB1400
Manufacturer Hitachi Semiconductor
Description Silicon PNP Epitaxial Transistor
Published Mar 22, 2005
Detailed Description 2SB1400 Silicon PNP Epitaxial Application Low frequency power amplifier Outline TO-220FM 2 1 1. Base 2. Collector 3....
Datasheet PDF File 2SB1400 PDF File

2SB1400
2SB1400

Overview
2SB1400 Silicon PNP Epitaxial Application Low frequency power amplifier Outline TO-220FM 2 1 1.
Base 2.
Collector 3.
Emitter 12 3 1 kΩ (Typ) 400 Ω (Typ) 3 2SB1400 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Symbol VCBO VCEO VEBO IC I C(peak) PC PC * Junction temperature Storage temperature Note: 1.
Value at TC = 25°C.
Tj Tstg 1 Ratings –120 –120 –7 –6 –10 2 25 150 –55 to +150 Unit V V V A A W °C °C Electrical Characteristics (Ta = 25°C) Item Collector to base breakdown voltage Symbol V(BR)CBO Min –120 –120 –7 — — 1000 — — — — Typ — — — — — — — — — — Max — — — –10 –10 20000 –1.
5 –3.
0 –2.
0 –3.
5 V V Unit V V V µA Test conditions I C = –0.
1 mA, IE = 0 I C = –25 mA, RBE = ∞ I E = –50 mA, IC = 0 VCB = –100 V, IE = 0 VCE = –100 V, RBE = ∞ VCE = –3 V, IC = –3 A*1 I C = –3 A, IB = –6 mA*1 I C = –6 A, IB = –60 mA*1 I C = –3 A, IB = –6 mA*1 I C = –6 A, IB = –60 mA*1 Collector to emitter breakdown V(BR)CEO voltage Emitter to base breakdown voltage Collector cutoff current V(BR)EBO I CBO I CEO DC current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Note: 1.
Pulse test.
hFE VCE(sat)1 VCE(sat)2 VBE(sat)1 VBE(sat)2 See switching characteristic curve of 2SB727(K).
2 2SB1400 Maximum Collector Dissipation Curve 30 Collector power dissipation Pc (W) –10 –3 –1.
0 –0.
3 –0.
1 Area of Safe Operation iC (peak) IC (max) PW 1 µs ) °C s s 25 ms 0µ m = 10 1 10 (T C on = ati er Op 20 Collector Current IC (A) DC 10 0 50 100 Case Temperature TC (°C) 150 –0.
03 Ta = 25°C 1 Shot pulse –0.
01 –3 –10 –30 –100 –300 Collector to emitter Voltage VCE (V) Typical Output Characteristics –5 –2.
0 1.
6 –1.
8 – 1.
2 – 4 .
–1 –1.
0 –0.
8 DC Current Transfer Ratio vs.
Collector Current 10,000 DC current transfer ratio hFE °C 75 Ta 5°C C 2 5° –2 = Collector Current IC (A) –4 3,000 –3 –0.
6 –0.
4 –2 TC = 25...


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