INCHANGE Semiconductor
isc Silicon
PNP Power
Transistor
isc Product Specification
MJ3738
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -225V(Min) ·High Switching Speed
APPLICATIONS ·Designed for high voltage switching and amplifier
applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VCBO
Collector-Base Voltage
-250
V
VCEO
Collector-Emitter Voltage
-225
V
VEBO
Emitter-Base Voltage
-5 V
IC Collector Current-Continuous
-0.
5 A
PD Total Power Dissipation@TC=25℃ 20 W
TJ Junction Temperature
200 ℃
Tstg Storage Temperature
-65~200 ℃
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isc Silicon...