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MJ3738

Part Number	MJ3738
Manufacturer	Inchange Semiconductor
Description	Silicon PNP Power Transistor
Published	Nov 11, 2016
Detailed Description	INCHANGE Semiconductor isc Silicon PNP Power Transistor isc Product Specification MJ3738 DESCRIPTION ·Collector-Emitte...
Datasheet	MJ3738 PDF File

Overview

INCHANGE Semiconductor isc Silicon PNP Power Transistor isc Product Specification MJ3738 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -225V(Min) ·High Switching Speed APPLICATIONS ·Designed for high voltage switching and amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -250 V VCEO Collector-Emitter Voltage -225 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -0.
5 A PD Total Power Dissipation@TC=25℃ 20 W TJ Junction Temperature 200 ℃ Tstg Storage Temperature -65~200 ℃ isc website：www.
iscsemi.
com 1 isc & iscsemi is registered trademark INCHANGE Semiconductor isc Silicon...

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