isc Silicon
NPN Power
Transistor
INCHANGE Semiconductor
MJL21194G
DESCRIPTION ·High Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 250V(Min) High DC Current Gain – hFE = 25 Min @ IC = 8 Adc ·Complement to Type MJL21193 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS Perforated Emitter technology
high power audio output, disk head positioners linear applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VCBO
Collector-Base Voltage
400
V
VCEO
Collector-Emitter Voltage
250
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
16
A
IB
Base Current-Continuous
PC
Collector Power Dissipation @...