DatasheetsPDF.com

MJL21194G


Part Number MJL21194G
Manufacturer Inchange Semiconductor
Title Silicon NPN Power Transistor
Description ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 250V(Min) High DC Current Gain – hFE = 25 Min @ IC = 8 Adc ·Complement to Type MJL21193 ·Mi...
Features SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 50mA; IB= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 8.0A; IB= 0.8A VCE(sat)-2 Collector-Emitter Saturation Voltage IC= -16A; IB= -3.2A VBE(on) Base-Emitter On Voltage IC= 8A; VCE= 5V ICEO Collector Cut...

File Size 216.51KB
Datasheet MJL21194G PDF File








Similar Ai Datasheet

MJL21194 : MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MJL21193/D Silicon Power Transistors The MJL21193 and MJL21194 utilize Perforated Emitter technology and are specifically designed for high power audio output, disk head positioners and linear applications. • • • • Total Harmonic Distortion Characterized High DC Current Gain – hFE = 25 Min @ IC = 8 Adc Excellent Gain Linearity High SOA: 2.25 A, 80 V, 1 Second MJL21193* NPN MJL21194* *Motorola Preferred Device PNP 16 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 250 VOLTS 200 WATTS CASE 340G–02 TO–3PBL MAXIMUM RATINGS Rating Collector–Emitter Voltage Collector–Base Voltage Emitter–Base Voltage Collector–Emitter Voltage – 1..

MJL21194 : MJL21193 (PNP), MJL21194 (NPN) Silicon Power Transistors The MJL21193 and MJL21194 utilize Perforated Emitter technology and are specifically designed for high power audio output, disk head positioners and linear applications. Features • Total Harmonic Distortion Characterized • High DC Current Gain • Excellent Gain Linearity • High SOA • These Devices are Pb−Free and are RoHS Compliant* MAXIMUM RATINGS Rating Symbol Value Unit Collector−Emitter Voltage Collector−Base Voltage Emitter−Base Voltage Collector−Emitter Voltage − 1.5 V Collector Current − Continuous Collector Current − Peak (Note 1) Base Current − Continuous Total Power Dissipation @ TC = 25_C Derate above 25_C VCEO VCBO VE.

MJL21194 : ·With TO-3PL package ·Complement to type MJL21193 ·Excellent gain linearity APPLICATIONS ·Designed for high power audio output,disk head positioners and linear applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION Fig.1 simplified outline (TO-3PL) and symbol ABSOLUTE MAXIMUM RATINGS(Tc=25 ) SYMBOL VCBO VCEO VEBO IC ICM IB PD Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Base current Total power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector MAX 400 250 5 16 30 5 200 -65~150 -65~150 UNIT V V V A A A W THERMAL .

MJL21194 : ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 250V(Min) High DC Current Gain – hFE = 25 Min @ IC = 8 Adc ·Complement to Type MJL21193 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Perforated Emitter technology high power audio output, disk head positioners linear applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 400 V VCEO Collector-Emitter Voltage 250 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 16 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 5 A 200 W 150 ℃ Tstg Storage Temperatur.




Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)