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FDMC3612

N-Channel Power Trench MOSFET

Description

FDMC3612 N-Channel PowerTrench® MOSFET FDMC3612 N-Channel Power Trench® MOSFET 100 V, 12 A, 110 mΩ February 2012 Features General Description „ Max rDS(on) = 110 mΩ at VGS = 10 V, ID = 3.3 A „ Max rDS(on) = 122 mΩ at VGS = 6 V, ID = 3.0 A „ Low Profile - 1 mm max in Power 33 „ 100% UIL Tested „ RoHS Compliant This N-Channel MOSFET is produced using Fai...


Fairchild Semiconductor

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