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FDMC3612 Datasheet PDF


Part Number FDMC3612
Manufacturer Fairchild Semiconductor
Title N-Channel Power Trench MOSFET
Description „ Max rDS(on) = 110 mΩ at VGS = 10 V, ID = 3.3 A „ Max rDS(on) = 122 mΩ at VGS = 6 V, ID = 3.0 A „ Low Profile - 1 mm max in Power 33 „ 100% UIL ...
Features General Description „ Max rDS(on) = 110 mΩ at VGS = 10 V, ID = 3.3 A „ Max rDS(on) = 122 mΩ at VGS = 6 V, ID = 3.0 A „ Low Profile - 1 mm max in Power 33 „ 100% UIL Tested „ RoHS Compliant This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has be...

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Datasheet FDMC3612 PDF File








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FDMC3612 : SMD Type N-Channel MOSFET FDMC3612 (KDMC3612) MOSFET ■ Features ● VDS (V) = 100V ● ID = 12A ● RDS(ON) < 110mΩ (VGS = 10V) ● RDS(ON) < 122mΩ (VGS = 6V) ● Low Profile - 1 mm max in Power 33 D5 D6 D7 D8 4G 3S 2S 1S DFN 3X3 Top 8765 1 234 Bottom DDD D GS S S ■ Absolute Maximum Ratings Ta = 25℃ Parameter Drain-Source Voltage Gate-Source Voltage Tc=25℃ (Package limited) Continuous Drain Current -Continuous Tc=25℃ (Silicon limited) Ta=25℃ (Note.1) Continuous Drain Current -Pulsed Single Pulse Avalanche Energy (Note.2) Power Dissipation Tc=25℃ Ta=25℃ (Note.1) Thermal Resistance.Junction- to-Ambient (Note.1) Thermal Resistance.Junction- to-Case Junction Temperature Storage Te.

FDMC3612 : This N−Channel MOSFET is produced using onsemi’s advanced POWERTRENCH process that has been especially tailored to minimize the on−state resistance and yet maintain superior switching performance. Features • Max rDS(on) = 110 mW at VGS = 10 V, ID = 3.3 A • Max rDS(on) = 122 mW at VGS = 6 V, ID = 3.0 A • Low Profile − 1 mm Max in Power 33 • 100% UIL Tested • These Devices are Pb−Free and are RoHS Compliant Applications • DC − DC Conversion • PSE Switch DATA SHEET www.onsemi.com 8765 SSSG 1234 DDDD Top Bottom WDFN8 3.3x3.3, 0.65P CASE 511DR FDMC3612 SS SG DDDD Top Bottom WDFN8 3.3x3.3, 0.65P CASE 511DQ FDMC3612−L701 MARKING DIAGRAM ON AXYKK FDMC 3612 FDMC 3612 ALYW FDMC3612 .

FDMC3612-L701 : This N−Channel MOSFET is produced using onsemi’s advanced POWERTRENCH process that has been especially tailored to minimize the on−state resistance and yet maintain superior switching performance. Features • Max rDS(on) = 110 mW at VGS = 10 V, ID = 3.3 A • Max rDS(on) = 122 mW at VGS = 6 V, ID = 3.0 A • Low Profile − 1 mm Max in Power 33 • 100% UIL Tested • These Devices are Pb−Free and are RoHS Compliant Applications • DC − DC Conversion • PSE Switch DATA SHEET www.onsemi.com 8765 SSSG 1234 DDDD Top Bottom WDFN8 3.3x3.3, 0.65P CASE 511DR FDMC3612 SS SG DDDD Top Bottom WDFN8 3.3x3.3, 0.65P CASE 511DQ FDMC3612−L701 MARKING DIAGRAM ON AXYKK FDMC 3612 FDMC 3612 ALYW FDMC3612 .




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