INCHANGE Semiconductor
isc Silicon
PNP Power
Transistor
isc Product Specification
KTB2955
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -120V(Min) ·Complement to Type KTD3055
APPLICATIONS ·High power amplifier applications ·Recommended for 30~35W audio frequency amplifier output
stage application.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VCBO
Collector-Base Voltage
-120
V
VCEO
Collector-Emitter Voltage
-120
V
VEBO
Emitter-Base Voltage
-5 V
IC Collector Current-Continuous
-10 A
IB Base Current
PC
Collector Power Dissipation @TC=25℃
TJ Junction Temperature
-1 A 40 W 150 ℃
Tstg Storage Temperature
-55~150 ℃
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