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KTB2955

Inchange Semiconductor
Part Number KTB2955
Manufacturer Inchange Semiconductor
Description Silicon PNP Power Transistors
Published Nov 14, 2016
Detailed Description INCHANGE Semiconductor isc Silicon PNP Power Transistor isc Product Specification KTB2955 DESCRIPTION ·Collector-Emitt...
Datasheet PDF File KTB2955 PDF File

KTB2955
KTB2955

Overview
INCHANGE Semiconductor isc Silicon PNP Power Transistor isc Product Specification KTB2955 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -120V(Min) ·Complement to Type KTD3055 APPLICATIONS ·High power amplifier applications ·Recommended for 30~35W audio frequency amplifier output stage application.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -120 V VCEO Collector-Emitter Voltage -120 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -10 A IB Base Current PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature -1 A 40 W 150 ℃ Tstg Storage Temperature -55~150 ℃ isc website： www.
iscsemi.
com 1 isc & iscsemi is registered trademark INCHANGE Semiconductor isc Silicon PNP Power Transistor isc Product Specification KTB2955 ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP.
MAX UNIT V(BR)CEO Collector-Emitter Breakd...


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