Silicon NPN Power Transistors
isc Silicon NPN Power Transistor KTC4370A DESCRIPTION ·High Collector-Emitter Breakdown Voltage VCEO= 180V(Min) ·Complement to Type KTA1659A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high voltage applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collect...
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