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KTC4370A

Inchange Semiconductor
Part Number KTC4370A
Manufacturer Inchange Semiconductor
Description Silicon NPN Power Transistors
Published Nov 14, 2016
Detailed Description isc Silicon NPN Power Transistor KTC4370A DESCRIPTION ·High Collector-Emitter Breakdown Voltage VCEO= 180V(Min) ·Compl...
Datasheet PDF File KTC4370A PDF File

KTC4370A
KTC4370A

Overview
isc Silicon NPN Power Transistor KTC4370A DESCRIPTION ·High Collector-Emitter Breakdown Voltage VCEO= 180V(Min) ·Complement to Type KTA1659A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high voltage applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 180 V VCEO Collector-Emitter Voltage 180 V VEBO Emitter-Base Voltage 5.
0 V IC(DC) Collector Current(DC) 1.
5 A IB(DC) PC TJ Base Current Collector Power Dissipation @TC=25℃ Junction Temperature 0.
15 A 20 W 150 ℃ Tstg Storage Temperature -55~150 ℃ isc website： www.
iscsemi.
com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 500mA; IB= 50mA VBE(on) Base-Emitter On V...


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