isc Silicon
NPN Power
Transistor
DESCRIPTION ·High Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 180V(Min) ·Low Collector Saturation Voltage-
: VCE(sat)= 1.
0V(Max)@ (IC= 0.
5A, IB= 50mA) ·Complement to Type KTB1369 ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·High Voltage application ·TV, monitor vertical output application ·Driver stage application ·Color TV class B sound output application
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VCBO
Collector-Base Voltage
200
V
VCEO
Collector-Emitter Voltage
180
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
2
A
IB
Base Current-Continuous
P...