isc Silicon
NPN Power
Transistor
DESCRIPTION ·Collector–Emitter Sustaining Voltage
: VCEO(SUS) = 125V(Min.
) ·High Switching Speed ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for low voltage ,high speed,power switching in
Inductive circuits where fall time is critical.
It is particularly suited for battery switch mode application such as switching
regulations.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
MAX
UNIT
VCBO
Collector-Base Voltage
200
V
VCEO
Collector-Emitter Voltage
125
V
VEBO
Emitter-Base Voltage
7
V
IC
Collector Current-Continuous
70
A
IB
Base Current
PC
Collector Power Dissipation @TC=25...