isc Silicon
NPN Darlington Power
Transistor
DESCRIPTION ·High DC Current Gain-
: hFE = 1000(Min)@ IC= 1.
5A ·Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = 60V(Min) ·Low Collector-Emitter Saturation Voltage-
: VCE(sat) = 1.
2V(Max)@ IC= 2.
5A ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for High gain amplifier power switching
applications.
ABSOLUTE MAXIMUM RATINGS (Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
60
V
VCEO
Collector-Emitter Voltage
60
V
VEBO
Emitter-Base Voltage
7
V
IC
Collector Current-Continuous
3
A
ICM
Collector Current-Peak
6
A
PC
Collector Power Dissipation TC=25℃
...