isc Silicon
PNP Power
Transistor
DESCRIPTION ·High Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= -350V(Min) ·Good Linearity of hFE ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for high-speed switching and linear amplifier
application for high-voltage operational amplifier, switching
regulators, converters, inverters,deflection stages and high fidelity amplifiers.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VCBO
Collector-Base Voltage
-400
VCEO
Collector-Emitter Voltage
-350
VEBO
Emitter-Base Voltage
-6
IC
Collector Current-Continuous
-2
ICM
Collector Current-Peak
-5
IB
Collector Current-Cont...