isc Silicon
PNP Power
Transistor
INCHANGE Semiconductor
2SAR586D
DESCRIPTION ·Suitable for middle power drivers ·Low VCE(sat)
VCE(sat)≤-0.
32V@(IC=-2A,IB=-100mA) ·Complementary
NPN types:2SCR586D ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Low frequency amplifier
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-80 V
VCEO
Collector-Emitter Voltage
-80 V
VEBO
Emitter-Base Voltage
-6 V
IC Collector Current-Continuous -5 A
ICM Collector Current-Peak
PC
Collector Power Dissipation @ TC=25℃
TJ Junction Temperature
-10 A 10 W 150 ℃
Tstg Storage Temperature Ran...