DatasheetsPDF.com

2SAR586D

Inchange Semiconductor
Part Number 2SAR586D
Manufacturer Inchange Semiconductor
Description Silicon PNP Power Transistor
Published Nov 20, 2016
Detailed Description isc Silicon PNP Power Transistor INCHANGE Semiconductor 2SAR586D DESCRIPTION ·Suitable for middle power drivers ·Low V...
Datasheet PDF File 2SAR586D PDF File

2SAR586D
2SAR586D

Overview
isc Silicon PNP Power Transistor INCHANGE Semiconductor 2SAR586D DESCRIPTION ·Suitable for middle power drivers ·Low VCE(sat) VCE(sat)≤-0.
32V@(IC=-2A,IB=-100mA) ·Complementary NPN types:2SCR586D ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Low frequency amplifier ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -80 V VCEO Collector-Emitter Voltage -80 V VEBO Emitter-Base Voltage -6 V IC Collector Current-Continuous -5 A ICM Collector Current-Peak PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature -10 A 10 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.
iscsemi.
com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor INCHANGE Semiconductor 2SAR586D ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP.
MAX UNIT BVCBO Collector...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)