INCHANGE Semiconductor
isc Silicon
NPN Power
Transistor
isc Product Specification
3DD207i
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 200V(Min.
) ·Collector-Emitter Saturation Voltage-
: VCE(sat)= 1.
0V(Max)@ IC= 3A
APPLICATIONS ·Designed for auto amplifier application.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
200 V
VCEO
Collector-Emitter Voltage
200 V
VEBO
Emitter-Base Voltage
6V
IC Collector Current-Continuous
5A
PC Collector Power Dissipation@TC=75℃ 50
W
TJ Junction Temperature
150 ℃
Tstg Storage Temperature
-55~150 ℃
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