3DD207I Datasheet PDF

Part Number 3DD207I
Manufacturer Inchange Semiconductor
Title Silicon NPN Power Transistor
Description ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 200V(Min.) ·Collector-Emitter Saturation Voltage- : VCE(sat)= 1.0V(Max)@ IC= 3A APPLICATIONS ·D...
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Datasheet 3DD207I PDF File

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3DD207 : ·With TO-3 packaging ·Large collector current ·Low collector saturation voltage ·High power dissipation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in DC-DC converter ·Driver of solenoid or motor ·For audio amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 5 A PD Total Power Dissipation@TC=75℃ 50 W TJ Max.Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal R.

3DD2073 : 3DD2073 NPN PCM ICM Tjm Tstg Rth V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO VBEsat VCEsat hFE Tc=25℃ VCE=10V IC=0.8A ICB=1mA ICE=1mA IEB=1mA VCB=120V VEB=5V Ic=0.5A IB=0.05A VCB=10V Ic=0.5A 25 1.5 175 -55~150 4 ≥150 ≥150 ≥5.0 ≤10 ≤10 ≤3.0 ≤1.5 25~200 W A ℃ ℃ ℃/W V V V mA mA V SMD-1 B2-01B(F1) : 2SA940 TO-220 TO-257 1. E 2. B 3. C .

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