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3DD207I

Part Number	3DD207I
Manufacturer	Inchange Semiconductor
Description	Silicon NPN Power Transistor
Published	Nov 22, 2016
Detailed Description	INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification 3DD207i DESCRIPTION ·Collector-Emitt...
Datasheet	3DD207I PDF File

Overview

INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification 3DD207i DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 200V(Min.
) ·Collector-Emitter Saturation Voltage- : VCE(sat)= 1.
0V(Max)@ IC= 3A APPLICATIONS ·Designed for auto amplifier application.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 200 V VCEO Collector-Emitter Voltage 200 V VEBO Emitter-Base Voltage 6V IC Collector Current-Continuous 5A PC Collector Power Dissipation@TC=75℃ 50 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃ isc website： www.
iscsemi.
com isc & iscsemi is registered trademark 1 INCHANGE Sem...

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