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PTFB193404F

Thermally-Enhanced High Power RF LDMOS FETs

Description

PTFB193404F Thermally-Enhanced High Power RF LDMOS FETs 340 W, 30 V, 1930 – 1990 MHz Description The PTFB193404F is a 340‑watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 1930 to 1990 MHz frequency band. Features include input and output matching, high gain and thermally-enhanced package with earless flange. Ma...


Infineon

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