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PTFB193404F

Infineon
Part Number PTFB193404F
Manufacturer Infineon
Description Thermally-Enhanced High Power RF LDMOS FETs
Published Nov 27, 2016
Detailed Description PTFB193404F Thermally-Enhanced High Power RF LDMOS FETs 340 W, 30 V, 1930 – 1990 MHz Description The PTFB193404F is a ...
Datasheet PDF File PTFB193404F PDF File

PTFB193404F
PTFB193404F

Overview
PTFB193404F Thermally-Enhanced High Power RF LDMOS FETs 340 W, 30 V, 1930 – 1990 MHz Description The PTFB193404F is a 340‑watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 1930 to 1990 MHz frequency band.
Features include input and output matching, high gain and thermally-enhanced package with earless flange.
Manufactured with Infineon’s advanced LDMOS process, this device provides excellent thermal performance and superior reliability.
PTFB193404F Package H-37275-6/2 IMD, ACPR (dBc) Drain Efficiency (%) Two-carrier WCDMA 3GPP Drive-up VDD = 30 V, IDQ = 2.
6 A, ƒ = 1990 MHz, 3GPP WCDMA signal, PAR = 8 dB, 10 MHz carrier spacing, BW = 3.
84 MHz ...


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