Part Number
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PTFB191501E |
Manufacturer
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Infineon Technologies |
Description
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Thermally-Enhanced High Power RF LDMOS FETs |
Published
|
Nov 27, 2016 |
Detailed Description
|
Confidential, Limited Internal Distribution
Thermally-Enhanced High Power RF LDMOS FETs 150 W, 1930 – 1990 MHz
Descript...
|
Datasheet
|
PTFB191501E
|
Overview
Confidential, Limited Internal Distribution
Thermally-Enhanced High Power RF LDMOS FETs 150 W, 1930 – 1990 MHz
Description
The PTFB191501E and PTFB191501F are 150-watt LDMOS FETs designed for single- and two-carrier WCDMA and CDMA applications from 1930 to 1990 MHz.
Features include input and output matching, and thermally-enhanced, RoHs-compliant package with slotted and earless flanges.
Manufactured with Infineon's advanced LDMOS process, these devices provide excellent thermal performance and superior reliability.
PTFB191501E Package H-36248-2
PTFB191501F Package H-37248-2
PTFB191501E PTFB191501F
IMD (dBc)
Efficiencydiscontinu(%)ed products
Two-carrier WCDMA Drive-up VDD = 30 V, IDQ ...
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