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PTFB191501F

Infineon Technologies
Part Number PTFB191501F
Manufacturer Infineon Technologies
Description Thermally-Enhanced High Power RF LDMOS FETs
Published Nov 27, 2016
Detailed Description Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 150 W, 1930 – 1990 MHz Descript...
Datasheet PDF File PTFB191501F PDF File

PTFB191501F
PTFB191501F

Overview
Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 150 W, 1930 – 1990 MHz Description The PTFB191501E and PTFB191501F are 150-watt LDMOS FETs designed for single- and two-carrier WCDMA and CDMA applications from 1930 to 1990 MHz.
Features include input and output matching, and thermally-enhanced, RoHs-compliant package with slotted and earless flanges.
Manufactured with Infineon's advanced LDMOS process, these devices provide excellent thermal performance and superior reliability.
PTFB191501E Package H-36248-2 PTFB191501F Package H-37248-2 PTFB191501E PTFB191501F IMD (dBc) Efficiencydiscontinu(%)ed products Two-carrier WCDMA Drive-up VDD = 30 V, IDQ = 1.
20 A, ƒ = 1990 MHz, 3GPP WCDMA, PAR = 8 dB, 10 MHz carrier spacing, BW 3.
84 MHz -20 40 -25 Efficiency 35 -30 IMD Up 30 -35 25 -40 20 -45 15 IMD Low -50 10 -55 ACPR 5 -60 0 31 33 35 37 39 41 43 45 47 49 Output Power (dBm) RF Characteristics Features • Broadband internal matc...


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