Part Number
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PTFB211503EL |
Manufacturer
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Infineon |
Description
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Thermally-Enhanced High Power RF LDMOS FETs |
Published
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Nov 27, 2016 |
Detailed Description
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PTFB211503EL PTFB211503FL
Thermally-Enhanced High Power RF LDMOS FETs 150 W, 2110 – 2170 MHz
Description
The PTFB21150...
|
Datasheet
|
PTFB211503EL
|
Overview
PTFB211503EL PTFB211503FL
Thermally-Enhanced High Power RF LDMOS FETs 150 W, 2110 – 2170 MHz
Description
The PTFB211503EL and PTFB211503FL are thermally-enhanced, 150-watt, LDMOS FETs designed for cellular power amplifier applications in the 2110 to 2170 frequency band.
Features include I/O matching, high gain, and thermally-enhanced ceramic open-cavity packages with slotted and earless flanges.
Manufactured with Infineon's advanced LDMOS process, these devices provide excellent thermal performance and superior reliability.
PTFB211503EL H-33288-6
PTFB211503FL H-34288-4/2
IMD (dBc) Efficiency (%)
Two-carrier WCDMA 3GPP Drive-up VDD = 30 V, IDQ = 1.
20 A, ƒ = 2170 MHz, 3GPP WCDMA, PAR = 8 d...
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