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PTFB211503FL

Infineon
Part Number PTFB211503FL
Manufacturer Infineon
Description Thermally-Enhanced High Power RF LDMOS FETs
Published Nov 27, 2016
Detailed Description PTFB211503EL PTFB211503FL Thermally-Enhanced High Power RF LDMOS FETs 150 W, 2110 – 2170 MHz Description The PTFB21150...
Datasheet PDF File PTFB211503FL PDF File

PTFB211503FL
PTFB211503FL

Overview
PTFB211503EL PTFB211503FL Thermally-Enhanced High Power RF LDMOS FETs 150 W, 2110 – 2170 MHz Description The PTFB211503EL and PTFB211503FL are thermally-enhanced, 150-watt, LDMOS FETs designed for cellular power amplifier applications in the 2110 to 2170 frequency band.
Features include I/O matching, high gain, and thermally-enhanced ceramic open-cavity packages with slotted and earless flanges.
Manufactured with Infineon's advanced LDMOS process, these devices provide excellent thermal performance and superior reliability.
PTFB211503EL H-33288-6 PTFB211503FL H-34288-4/2 IMD (dBc) Efficiency (%) Two-carrier WCDMA 3GPP Drive-up VDD = 30 V, IDQ = 1.
20 A, ƒ = 2170 MHz, 3GPP WCDMA, PAR = 8 d...


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