Part Number
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CHA1010-99F |
Manufacturer
|
United Monolithic Semiconductors |
Description
|
7-11GHz Low Noise Amplifier |
Published
|
Nov 28, 2016 |
Detailed Description
|
CHA1010-99F
7-11GHz Low Noise Amplifier
GaAs Monolithic Microwave IC
Description
The CHA1010-99F is a monolithic two-...
|
Datasheet
|
CHA1010-99F
|
Overview
CHA1010-99F
7-11GHz Low Noise Amplifier
GaAs Monolithic Microwave IC
Description
The CHA1010-99F is a monolithic two-stage wide-band low noise amplifier.
It is designed for a wide range of applications, from professional to commercial communication systems.
The circuit is manufactured with a pHEMT process, via holes through the substrate, air bridges and electron beam gate lithography.
It is available in chip form.
IN
VG VD
OUT
Main Features
■ Broadband performance: 7-11GHz ■ 1.
0dB Noise Figure ■ 32dB Linear Gain ■ +5.
5dBm Pout at 1dB gain compression ■ DC bias: Vd=5Volt, Id=30mA ■ Chip size 2.
57x1.
79x0.
1mm
-40°C, +25°C, +85°C
Main Electrical Characteristics
Tamb= +25°C.
Vd = +5.
0V...
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