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CHA1010-99F

United Monolithic Semiconductors
Part Number CHA1010-99F
Manufacturer United Monolithic Semiconductors
Description 7-11GHz Low Noise Amplifier
Published Nov 28, 2016
Detailed Description CHA1010-99F 7-11GHz Low Noise Amplifier GaAs Monolithic Microwave IC Description The CHA1010-99F is a monolithic two-...
Datasheet PDF File CHA1010-99F PDF File

CHA1010-99F
CHA1010-99F


Overview
CHA1010-99F 7-11GHz Low Noise Amplifier GaAs Monolithic Microwave IC Description The CHA1010-99F is a monolithic two-stage wide-band low noise amplifier.
It is designed for a wide range of applications, from professional to commercial communication systems.
The circuit is manufactured with a pHEMT process, via holes through the substrate, air bridges and electron beam gate lithography.
It is available in chip form.
IN VG VD OUT Main Features ■ Broadband performance: 7-11GHz ■ 1.
0dB Noise Figure ■ 32dB Linear Gain ■ +5.
5dBm Pout at 1dB gain compression ■ DC bias: Vd=5Volt, Id=30mA ■ Chip size 2.
57x1.
79x0.
1mm -40°C, +25°C, +85°C Main Electrical Characteristics Tamb= +25°C.
Vd = +5.
0V Symbol Parameter Freq Frequency range Gain Linear Gain NF Noise Figure Pout Output Power @1dB compression Min Typ Max Unit 7 11 GHz 32 dB 1.
0 dB 5.
5 dBm Ref.
: DSCHA10103333 - 29 Nov 13 1/10 Specifications subject to change without notice United Monolithic Semiconductors S...


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