Part Number
|
CHA6362-QXG |
Manufacturer
|
United Monolithic Semiconductors |
Description
|
17.7 - 19.7GHz Power Amplifier |
Published
|
Nov 28, 2016 |
Detailed Description
|
CHA6362-QXG
17.7 - 19.7GHz Power Amplifier
GaAs Monolithic Microwave IC in SMD leadless package
Description
The CHA6362...
|
Datasheet
|
CHA6362-QXG
|
Overview
CHA6362-QXG
17.
7 - 19.
7GHz Power Amplifier
GaAs Monolithic Microwave IC in SMD leadless package
Description
The CHA6362-QXG is a three stage monolithic GaAs high power circuit producing 2.
5 Watt output power.
It integrates a power detector and allows gain control.
ESD protections are included.
It is designed for Point To Point Radio or K-band Sat- Com application.
The circuit is manufactured with a pHEMT process, 0.
15µm gate length.
It is supplied in RoHS compliant SMD package.
Main Features
■ Frequency range: 17.
7- 19.
7GHz ■ 34.
5dBm saturated power ■ 42dBm OIP3 ■ 22dB gain ■ DC bias: Vd = 6.
0Volt @ Id = 1.
34A ■ QFN5x6 ■ MSL3
Power (dBm) & PAE (%)
Power & PAE
36
34
32
30 Psat P1dB PAE sa...
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