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CHA6362-QXG

United Monolithic Semiconductors
Part Number CHA6362-QXG
Manufacturer United Monolithic Semiconductors
Description 17.7 - 19.7GHz Power Amplifier
Published Nov 28, 2016
Detailed Description CHA6362-QXG 17.7 - 19.7GHz Power Amplifier GaAs Monolithic Microwave IC in SMD leadless package Description The CHA6362...
Datasheet PDF File CHA6362-QXG PDF File

CHA6362-QXG
CHA6362-QXG

Overview
CHA6362-QXG 17.
7 - 19.
7GHz Power Amplifier GaAs Monolithic Microwave IC in SMD leadless package Description The CHA6362-QXG is a three stage monolithic GaAs high power circuit producing 2.
5 Watt output power.
It integrates a power detector and allows gain control.
ESD protections are included.
It is designed for Point To Point Radio or K-band Sat- Com application.
The circuit is manufactured with a pHEMT process, 0.
15µm gate length.
It is supplied in RoHS compliant SMD package.
Main Features ■ Frequency range: 17.
7- 19.
7GHz ■ 34.
5dBm saturated power ■ 42dBm OIP3 ■ 22dB gain ■ DC bias: Vd = 6.
0Volt @ Id = 1.
34A ■ QFN5x6 ■ MSL3 Power (dBm) & PAE (%) Power & PAE 36 34 32 30 Psat P1dB PAE sa...


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