BFP842ESD
SiGe:C
NPN RF bipolar
transistor
Product description
The BFP842ESD is a high performance RF heterojunction bipolar
transistor (HBT) with an integrated ESD protection suitable for 2.
3 - 3.
5 GHz LNA applications.
Feature list
• Unique combination of high end RF performance and robustness: 16 dBm maximum RF input power, 1 kV HBM ESD hardness
• High transition frequency fT = 57 GHz to enable best in class noise performance at high frequencies:
NFmin = 0.
65 dB at 3.
5 GHz, 2.
5 V, 5 mA
• High gain Gma = 17.
5 dB at 3.
5 GHz, 2.
5 V, 15 mA
• OIP3 = 25.
5 dBm at 3.
5 GHz, 2.
5 V, 15 mA
•
Suitable for low voltage collector resistor)
applications
e.
g.
VCC
=
1.
2
V
and
1.
8
V
(2.
85
...