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BFP842ESD

Part Number	BFP842ESD
Manufacturer	Infineon
Description	NPN RF bipolar transistor
Published	Dec 1, 2016
Detailed Description	BFP842ESD SiGe:C NPN RF bipolar transistor Product description The BFP842ESD is a high performance RF heterojunction bi...
Datasheet	BFP842ESD PDF File

Overview

BFP842ESD SiGe:C NPN RF bipolar transistor Product description The BFP842ESD is a high performance RF heterojunction bipolar transistor (HBT) with an integrated ESD protection suitable for 2.
3 - 3.
5 GHz LNA applications.
Feature list • Unique combination of high end RF performance and robustness: 16 dBm maximum RF input power, 1 kV HBM ESD hardness • High transition frequency fT = 57 GHz to enable best in class noise performance at high frequencies: NFmin = 0.
65 dB at 3.
5 GHz, 2.
5 V, 5 mA • High gain Gma = 17.
5 dB at 3.
5 GHz, 2.
5 V, 15 mA • OIP3 = 25.
5 dBm at 3.
5 GHz, 2.
5 V, 15 mA • Suitable for low voltage collector resistor) applications e.
g.
VCC = 1.
2 V and 1.
8 V (2.
85 V, 3.
3 V, 3.
6 V require corresponding Product validation Qualified for industrial applications according to the relevant tests of JEDEC47/20/22.
Potential applications • Wireless communications: WLAN, WiMAX and Bluetooth • Satellite communication systems: GNSS navigation systems (GPS, GLONA...

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BFP842ESD NPN RF bipolar transistor - Infineon

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